december 2006 ? 2006 fairchild semiconductor corporation fds4470 rev d1 (w) fds4470 40v n-channel powertrench ? mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either sy nchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. applications ? dc/dc converter features ? 12.5 a, 40 v. r ds(on) = 9 m @ v gs = 10 v ? low gate charge (45 nc) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 40 v v gss gate-source voltage +30/?20 v i d drain current ? continuous (note 1a) 12.5 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.4 p d (note 1c) 1.2 w t j , t stg operating and storage junction temperature range ?55 to +175 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r ja thermal resistance, junction-to-ambient (note 1c) 125 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds4470 fds4470 13?? 12mm 2500 units fds4470
fds4470 rev d1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) e as drain-source avalanche energy single pulse, v dd =40v, i d =12.5a 370 mj i as drain-source avalanche current 12.5 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 40 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 42 mv/ c i dss zero gate voltage drain current v ds = 32 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 30 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3.9 5 v v gs(th) t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?8 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 12.5 a v gs = 10 v, i d = 12.5 a,t j =125 c 6 9 9 14 m i d(on) on?state drain current v gs = 10 v, v ds = 5 v 25 a g fs forward transconductance v ds = 10 v, i d = 12.5 a 45 s dynamic characteristics c iss input capacitance 2659 pf c oss output capacitance 605 pf c rss reverse transfer capacitance v ds = 20 v, v gs = 0 v, f = 1.0 mhz 298 pf switching characteristics (note 2) t d(on) turn?on delay time 14 25 ns t r turn?on rise time 12 22 ns t d(off) turn?off delay time 37 59 ns t f turn?off fall time v dd = 20 v, i d = 1 a, v gs = 10 v, r gen = 6 29 46 ns q g total gate charge 45 63 nc q gs gate?source charge 11.2 nc q gd gate?drain charge v ds = 20 v, i d = 12.5 a, v gs = 10 v 11 nc fds4470
fds4470 rev d1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v t rr diode reverse recovery time i f = 12.5 a, d if /d t = 100 a/s 33 ns q rr diode reverse recovery charge 39 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fds4470
fds4470 rev d1 (w) typical characteristics 0 10 20 30 40 50 60 70 80 00.511.522.5 v ds , drain to source voltage (v) i d , drain current (a) v gs = 10v 5.5v 5.0v 4.5v 6.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 20406080 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 5.0v 10v 6.0v 7.0v 5.5v 8.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 12.5a v gs = 10v 0.004 0.007 0.01 0.013 0.016 0.019 45678910 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 6.3a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0 15 30 45 60 75 90 2.5 3.5 4.5 5.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds4470
fds4470 rev d1 (w) typical characteristics 0 2 4 6 8 10 0 1020304050 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 12.5a v ds = 10v 20v 30v 0 800 1600 2400 3200 4000 0 10203040 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds4470
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